www.irf.com 1 1/5/06 IRF7853PBF hexfet power mosfet primary side switch in bridge topology in universal input (36-75vin) isolated dc-dc converters primary side switch in push-pull topology for 18-36vin isolated dc-dc converters secondary side synchronous rectification switch for 15vout suitable for 48v non-isolated synchronous buck dc-dc applications benefits applications low gate to drain charge to reduce switching losses fully characterized capacitance including effective c oss to simplify design, (see app. note an1001) fully characterized avalanche voltage and current notes through are on page 8 so-8 top view 8 1 2 3 4 5 6 7 d d d d g s a s s a v dss r ds ( on ) max i d 100v 18m @vgs = 10v 8.3a absolute maximum ratings parameter units v ds drain-to-source voltage v v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 10v a i d @ t a = 70c continuous drain current, v gs @ 10v i dm pulsed drain current p d @t a = 25c maximum power dissipation w linear derating factor w/c dv/dt peak diode recovery dv/dt v/ns t j operating junction and c t stg storage temperature range thermal resistance parameter typ. max. units r jl junction-to-drain lead ??? 20 c/w r ja junction-to-ambient (pcb mount) ??? 50 2.5 max. 8.3 6.6 66 100 20 5.1 -55 to + 150 0.02 www.datasheet.in
IRF7853PBF 2 www.irf.com s d g st a ti c @ t j = 25c ( un l ess o th erw i se spec ifi e d) parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage 100 ??? ??? v ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.11 ??? v/c r ds(on) static drain-to-source on-resistance ??? 14.4 18 m ? v gs(th) gate threshold voltage 3.0 ??? 4.9 v i dss drain-to-source leakage current ??? ??? 20 a ??? ??? 250 i gss gate-to-source forward leakage ??? ??? 100 na gate-to-source reverse leakage ??? ??? -100 d ynam i c @ t j = 25c ( un l ess o th erw i se spec ifi e d) parameter min. typ. max. units gfs forward transconductance 11 ??? ??? s q g total gate charge ??? 28 39 q gs gate-to-source charge ??? 7.8 ??? nc q gd gate-to-drain ("miller") charge ??? 10 ??? r g gate resistance ??? 1.4 ??? ? t d(on) turn-on delay time ??? 13 ??? t r rise time ??? 6.6 ??? t d(off) turn-off delay time ??? 26 ??? ns t f fall time ??? 6.0 ??? c iss input capacitance ??? 1640 ??? c oss output capacitance ??? 310 ??? c rss reverse transfer capacitance ??? 71 ??? pf c oss output capacitance ??? 1600 ??? c oss output capacitance ??? 180 ??? c oss eff. effective output capacitance ??? 320 ??? avalanche characteristics parameter units e as single pulse avalanche energy mj i ar avalanche current a diode characteristics parameter min. typ. max. units i s continuous source current ??? ??? 2.3 (body diode) a i sm pulsed source current ??? ??? 66 (body diode) v sd diode forward voltage ??? ??? 1.3 v t rr reverse recovery time ??? 45 68 ns q rr reverse recovery charge ??? 84 130 nc t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) v gs = 20v v gs = -20v max. v gs = 0v, v ds = 1.0v, ? = 1.0mhz v gs = 0v, v ds = 80v, ? = 1.0mhz v gs = 0v, v ds = 0v to 80v v gs = 10v v dd = 50v i d = 5.0a r g = 6.2 ? t j = 25c, i s = 5.0a, v gs = 0v t j = 25c, i f = 5.0a, v dd = 25v di/dt = 100a/s conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma v gs = 10v, i d = 8.3a v ds = v gs , i d = 100a v ds = 100v, v gs = 0v v ds = 100v, v gs = 0v, t j = 125c mosfet symbol showing the integral reverse p-n junction diode. conditions v gs = 10v v gs = 0v v ds = 25v ? = 1.0mhz 610 5.0 typ. ??? ??? conditions v ds = 25v, i d = 5.0a i d = 5.0a v ds = 50v www.datasheet.in
IRF7853PBF www.irf.com 3 fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 4. normalized on-resistance vs. temperature 0.01 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60s pulse width tj = 25c 4.5v vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60s pulse width tj = 150c 4.5v vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 3.0 4.0 5.0 6.0 7.0 v gs , gate-to-source voltage (v) 0.1 1.0 10.0 100.0 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) v ds = 25v 60s pulse width t j = 25c t j = 150c -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.5 1.0 1.5 2.0 2.5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 8.3a v gs = 10v www.datasheet.in
IRF7853PBF 4 www.irf.com fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage fig 8. maximum safe operating area 0.2 0.4 0.6 0.8 1.0 1.2 v sd , source-to-drain voltage (v) 0.1 1.0 10.0 100.0 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 1020304050 q g total gate charge (nc) 0 4 8 12 16 20 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 80v vds= 50v vds= 20v i d = 5.0a 0 1 10 100 1000 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec www.datasheet.in
IRF7853PBF www.irf.com 5 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 100 t h e r m a l r e s p o n s e ( z t h j a ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = pdm x zthja + ta fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms
1 0.1 % + - fig 9. maximum drain current vs. ambient temperature 25 50 75 100 125 150 t c , casetemperature (c) 0 2 4 6 8 10 i d , d r a i n c u r r e n t ( a ) ri (c/w) i (sec) 7.016 0.00474 26.95 0.04705 16.04 2.3619 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 c ci i / ri ci= i / ri www.datasheet.in
IRF7853PBF 6 www.irf.com fig 13. on-resistance vs. gate voltage fig 12. on-resistance vs. drain current fig 14a&b. basic gate charge test circuit and waveform fig 15a&b. unclamped inductive test circuit and waveforms fig 15c. maximum avalanche energy vs. drain current t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v 1k vcc dut 0 l q g q gs q gd v g charge 0 10203040506070 i d , drain current (a) 10 20 30 40 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) v gs = 10v t c = 25c t c = 125c 4 6 8 10 12 14 16 v gs , gate-to-source voltage (v) 10 15 20 25 30 35 40 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) t j = 25c t j = 125c i d = 5.0a 25 50 75 100 125 150 starting t j , junction temperature (c) 0 500 1000 1500 2000 2500 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 0.23a 0.34a bottom 5.0a www.datasheet.in
IRF7853PBF www.irf.com 7 so-8 package details so-8 part marking e1 d e y b a a1 h k l .189 .1497 0 .013 .050 bas ic .0532 .0040 .2284 .0099 .016 .1968 .1574 8 .020 .0688 .0098 .2440 .0196 .050 4.80 3.80 0.33 1.35 0.10 5.80 0.25 0.40 0 1.27 bas ic 5.00 4.00 0.51 1.75 0.25 6.20 0.50 1.27 mi n max mi l l i me t e r s inches mi n max dim 8 e c .0075 .0098 0.19 0.25 .025 bas ic 0.635 bas ic 87 5 65 d b e a e 6x h 0.25 [.010] a 6 7 k x 45 8x l 8x c y 0.25 [.010] cab e1 a a1 8x b c 0.10 [.004] 4 3 12 footprint 8x 0.72 [.028] 6.46 [.255] 3x 1.27 [.050] 4. ou t l i ne conf or ms t o j e de c ou t l i ne ms -012aa. not e s : 1. dimens ioning & t ole rancing pe r as me y14.5m-1994. 2. cont rolling dime ns ion: millime t e r 3. dimensions are shown in millimet ers [inches]. 5 dime ns ion doe s not incl ude mol d prot r us ions . 6 dime ns ion doe s not incl ude mol d prot r us ions . mold prot rus ions not t o exceed 0.25 [.010]. 7 dimension is the lengt h of lead for soldering t o a s ubs t rat e. mold prot rus ions not t o exceed 0.15 [.006]. 8x 1.78 [.070] dat e code (yww) xxxx international rectifier logo f 7101 y = last digit of the year part number lot code ww = we e k example: t his is an irf7101 (mos fet ) p = de s i gnat e s l e ad- f r e e product (optional) a = assembly site code www.datasheet.in
IRF7853PBF 8 www.irf.com repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 49mh, r g = 25 ? , i as = 5.0a. when mounted on 1 inch square copper board, t 10 sec. 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reel pulse width 400s; duty cycle 2%. c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . i sd 5.0a, di/dt 320a/s, v dd v (br)dss , t j 150c. r is measured at
ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 1/06 data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on ir?s web site. www.datasheet.in
|
